shantou huashan electronic devices co.,ltd . applications medium power linear and switching applicatione. absolute maximum ratings t a =25 electrical characteristics t a =25 symbol characteristics min typ max unit test conditions bv ceo(sus) collector-emitter sustaining voltage 100 v i c =30ma, i b =0 i ceo collector cut-off current 300 na v ce =60v, i b =0 i ebo emitter-base cutoff current 1 ma v eb =5v, i c =0 i ces collector cutoff current 200 a v ce =100v, v be =0 h fe 1 dc current gain 25 v ce =4v, i c =1a h fe 2 10 v ce =4v, i c =3a v ce(sat) collector- emitter saturation voltage 1.2 v i c =3a, i b =0.6a v be(on) base- emitter on voltage 1.8 v v ce =4v,i c =3a, npn silicon transistor t stg storage temperature - 65~150 t j junction temperature 150 p c collector dissipation t c =25 40w v cer collector-emitter voltage 115v v ceo collector-emitter voltage 100v v ebo emitter-base voltage 5v i c collector current dc 3a i c collector current pulse 5a i b base current 1a HBD241C 1 D base b 2 D collector c 3 D emitter, e to-220
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